Building 3 (IBN SINA) East, Level 2, 2207-WS11 Division of Physical Science & Engineering
Selected Publications
Bin Fang, Mario Carpentieri, Steven Louis, asyl Tiberkevich, Andrei Slavin, IlyaN. Krivorotov, Riccardo Tomasello, Anna Giordano, Hongwen Jiang, Jialin Cai, Yaming Fan, Zehong Zhang, Baoshun Zhang, Jordan A. Katine, Kang L. Wang, Pedram Khalili Amiri,
Giovanni Finocchio*, Zhongming Zeng, Experimental Demonstration of spintronic broadband microwave detectors and their capability for powering nanodevices, Physical Review Applied, 2019,11: 014022;
Jialin Cai, Bin Fang, Like Zhang, Wenxing Lv, Baoshun Zhang, Tiejun Zhou, Giovanni Finocchio, and Zhongming Zeng*. Voltage-Controlled Spintronic Stochastic Neuron Based on a Magnetic Tunnel Junction. Physical Review Applied, 2019, 11(3): 034015;
LiKe Zhang, Bin Fang, Jialin Cai, Mario Carpentieri, Vito Puliafito, Francesca Garescì, Pedram Khalili Amiri, Giovanni Finocchio, and Zhongming Zeng , Ultrahigh detection sensitivity exceeding 105V/W in spin-torque diode，
Applied Physical Letter, 2018, 113, 102401;
Rongxin Xiong, Wanli Zhang, Bin Fang*, Gang Li,Zheng Li, Zhongming Zeng,and Minghua Tang, Ferromagnetic resonance manipulation by electric fields in Ni81 Fe19/Bi3.15Nd0.85Ti2.99Mn0.01 O12 multiferroic heterostructures, Applied Physical Letter,
2018,113, 172407;
Bin Fang, Mario Carpentieri, Xiaojie Hao, Hongwen Jiang, Jordan A. Katine, Ilya N. Krivorotov, Berthold Ocker, Juergen Langer, Kang L. Wang, Baoshun Zhang, Bruno Azzerboni, Pedram Khalili Amiri*, Giovanni Finocchio* and Zhongming Zeng* , Giant spin-torque
diode sensitivity in the absence of bias magnetic field, Nature Communications2016，711259 ;
Bin Fang, Jiafeng Feng, Huadong Gan, Roger Malmhall, Yiming Huai, Rongxin Xiong, Hongxiang Wei, Xiufeng Han, Baoshun Zhang, and Zhongming Zeng* , Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer
and planar free layer, AIP Advances 2016，6：125305;
Bin Fang, Jiafeng Feng, Hongxiang Wei, Xiufeng Han, Baoshun Zhang, and Zhongming Zeng*, Fabrication of spin-transfer nano-oscillator by colloidal lithography， Journal of nanomaterials 2015，2015：973957;
Bin Fang, Xu Zhang, Baoshun Zhang, Zhongming Zeng*, and Jianwang Cai, Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy, AIP Advances2015， 5：067116;
Bin Fang and Zhongming Zeng*，Spin torque nano-oscillators，Chinese science bulletin2014，1804-1811;
Education
2012.9 – 2017.6 Ph. D in Microelectronics and Solid State Electronics Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences Suzhou, Jiangsu, China Advisor: Prof. Zhongming Zeng
2008.9 –2012.6 B.S. in Physics Department of Physics, Henan Normal University, Xinxiang, Henan, China
Awards
National scholarship for graduate student, 2016
The first prize academic scholarship, 2016
The “Wu Yi Sun” scholarship for graduate student, 2016
