1. Bin He et al. Realization of zero-field skyrmions in a magnetic tunnel junction. Adv. Electron. Mater. 9, 2201240 (2023).
2. Bin He et al. All-Electrical 9-Bit Skyrmion-Based Racetrack Memory Designed with Laser Irradiation. Nano. Lett. 23, 20, 9482–9490 (2023).
3. Bin He et al. Creation of room-temperature sub-100 nm antiferromagnetic skyrmions in an antiferromagnet IrMn through interfacial exchange coupling. Nano Lett. 24, 7, 2196–2202 (2024).
4. Yao Guang et al. Electrical Detection of Magnetic Skyrmions in a Magnetic Tunnel Junction. Adv. Electron. Mater. 9, 2200570 (2022).
5. Qiqi Zhang et al. Perpendicular Magnetization Switching Driven by Spin-Orbit Torque for Artificial Synapses in Epitaxial Pt-based Multilayers. Adv. Electron. Mater. 8, 2200845 (2022).
Education
Institute of Physics, Chinese Academy of Sciences. Ph.D. in Group M02, State Key Laboratory of Magnetism
China. Sep. 2019-July 2024
South China University of Technology. Bachelor in Department of Applied Physics
